GROWTH OF SILICON HOMOEPITAXIAL THIN-FILMS BY ULTRAHIGH-VACUUM ION-BEAM SPUTTER DEPOSITION

被引：45

作者：

SCHWEBEL, C

MEYER, F

GAUTHERIN, G

PELLET, C

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 05期

关键词：

D O I：

10.1116/1.583475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1153 / 1158

页数：6

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