STUDY OF COMPENSATION IN INSULATING AND METALLIC N-TYPE CDSE USING TRANSPORT MEASUREMENTS

被引：11

作者：

LEVY, M ^{[1
]}

ROY, A ^{[1
]}

SARACHIK, MP ^{[1
]}

ISAACS, LL ^{[1
]}

机构：

[1] CUNY CITY COLL, DEPT CHEM, NEW YORK, NY 10031 USA

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.38.3323

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3323 / 3330

页数：8

共 30 条

[1] DIELECTRIC FUNCTION OF THE ELECTRON-GAS WITH DYNAMICAL-EXCHANGE DECOUPLING .2. DISCUSSION AND RESULTS [J].

BROSENS, F ;

DEVREESE, JT ;

LEMMENS, LF .

PHYSICAL REVIEW B, 1980, 21 (04) :1363-1379

[2] FREQUENCY-DEPENDENT EXCHANGE CORRECTION TO DIELECTRIC FUNCTION OF ELECTRON-GAS [J].

BROSENS, F ;

LEMMENS, LF ;

DEVREESE, JT .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1976, 74 (01) :45-55

[3]

BURMEISTER RA, 1967, PHYS STATUS SOLIDI, V24, P683

[4] MOBILITY OF ELECTRONS IN COMPENSATED SEMICONDUCTORS .I. EXPERIMENT [J].

CUEVAS, M .

PHYSICAL REVIEW, 1967, 164 (03) :1021-&

[5] COMPENSATION DEPENDENCE OF IMPURITY CONDUCTION IN ANTIMONY-DOPED GERMANIUM [J].

DAVIS, EA ;

COMPTON, WD .

PHYSICAL REVIEW, 1965, 140 (6A) :2183-&

[6] DIELECTRIC FUNCTION OF THE ELECTRON-GAS WITH DYNAMICAL-EXCHANGE DECOUPLING .1. ANALYTICAL TREATMENT [J].

DEVREESE, JT ;

BROSENS, F ;

LEMMENS, LF .

PHYSICAL REVIEW B, 1980, 21 (04) :1349-1362

[7] NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J].

ERGINSOY, C .

PHYSICAL REVIEW, 1950, 79 (06) :1013-1014

[8] MOBILITY OF ELECTRONS IN COMPENSATED SEMICONDUCTORS .2. THEORY [J].

FALICOV, LM ;

CUEVAS, M .

PHYSICAL REVIEW, 1967, 164 (03) :1025-&

[9] ELECTRICAL-CONDUCTION IN CDSE NEAR THE METAL-INSULATOR-TRANSITION [J].

FINLAYSON, DM ;

IRVINE, J ;

PETERKIN, LS .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (03) :253-266

[10] RESISTIVITY AND HALL COEFFICIENT OF ANTIMONY-DOPED GERMANIUM AT LOW TEMPERATURES [J].

FRITZSCHE, H .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (01) :69-80

← 1 2 3 →