TRANSMISSION PROPERTIES OF RIB WAVEGUIDES FORMED BY ANODIZATION OF EPITAXIAL GAAS ON ALXGA1-X AS LAYERS

被引：35
作者：
REINHART, FK
LOGAN, RA
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2] BELL TEL LABS INC,HOLMDEL,NJ 07733
来源：
APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 06期
关键词：
D O I：
10.1063/1.1655179
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：270 / 272
页数：3
相关论文
共 50 条
[21]   STRUCTURE DEFECTS INVESTIGATION OF GAAS AND ALXGA1-XAS EPITAXIAL LAYERS [J].
VASILEVSKAYA, VN ;
KONAKOVA, RV ;
MELNIKOV, GD ;
SEMENOVA, GN ;
TKHORIK, YA .
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1980, 15 (03) :313-316
[22]   Polaron effects in cylindrical GaAs/AlxGa1-x As core-shell nanowires [J].
Sun, Hui ;
Liu, Bing-Can ;
Tian, Qiang .
CHINESE PHYSICS B, 2017, 26 (09)
[23]   Electrical properties of digital-alloy (AlxGa1-x)As/GaAs during molecular beam epitaxy growth [J].
Kim, Jin Soak ;
Kim, Eun Kyu ;
Song, Jin Dong ;
Lee, Jung Il .
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 50 (06) :1912-1915
[24]   CHARACTERIZATION OF EPITAXIAL GAAS AND ALXGA1-XAS LAYERS DOPED WITH OXYGEN [J].
GOORSKY, MS ;
KUECH, TF ;
CARDONE, F ;
MOONEY, PM ;
SCILLA, GJ ;
POTEMSKI, RM .
APPLIED PHYSICS LETTERS, 1991, 58 (18) :1979-1981
[25]   GROWTH AND PROPERTIES OF ALXGA1-XN EPITAXIAL LAYERS [J].
BARANOV, B ;
DAWERITZ, L ;
GUTAN, VB ;
JUNGK, G ;
NEUMANN, H ;
RAIDT, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (02) :629-636
[26]   Influence of an applied electric field on the optical absorption of TCQDs of GaAs/AlxGa1-x As [J].
Joonhuay, Jirarut ;
van Dommelen, Paphavee .
OPTICS CONTINUUM, 2023, 2 (02) :338-348
[27]   PHOTOLUMINESCENCE OF DISORDER-INDUCED LOCALIZED STATES IN GAAS/ALXGA1-X AS SUPERLATTICES [J].
PAVESI, L ;
TUNCEL, E ;
ZIMMERMANN, B ;
REINHART, FK .
PHYSICAL REVIEW B, 1989, 39 (11) :7788-7795
[28]   LOCALIZATION-DEPENDENT THERMALIZATION OF EXCITONS IN GAAS/ALXGA1-X AS QUANTUM WELLS [J].
COLVARD, C ;
BIMBERG, D ;
ALAVI, K ;
MAIERHOFER, C ;
NOURI, N .
PHYSICAL REVIEW B, 1989, 39 (05) :3419-3422
[29]   DIRECT OBSERVATION OF BAND MIXING IN GAAS-(ALXGA1-X)AS QUANTUM HETEROSTRUCTURES [J].
SOORYAKUMAR, R ;
CHEMLA, DS ;
PINCZUK, A ;
GROSSARD, A ;
WEIGMANN, W ;
SHAM, LJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :349-350
[30]   Structural and electronic properties of Fe(AlxGa1-x)3 system [J].
Mondal, Debashis ;
Kamal, C. ;
Banik, Soma ;
Bhakar, Ashok ;
Kak, Ajay ;
Das, Gangadhar ;
Reddy, V. R. ;
Chakrabarti, Aparna ;
Ganguli, Tapas .
JOURNAL OF APPLIED PHYSICS, 2016, 120 (16)
12345