TRANSMISSION PROPERTIES OF RIB WAVEGUIDES FORMED BY ANODIZATION OF EPITAXIAL GAAS ON ALXGA1-X AS LAYERS

被引:35
|
作者
REINHART, FK
LOGAN, RA
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2] BELL TEL LABS INC,HOLMDEL,NJ 07733
关键词
D O I
10.1063/1.1655179
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:270 / 272
页数:3
相关论文
共 50 条
  • [2] Optical properties of Ag(AlxGa1-x)S2 epitaxial layers grown on GaAs(100) by multisource evaporation
    Tsuboi, N
    Matsuda, S
    Kurasawa, M
    Kobayashi, S
    Kaneko, F
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (9A): : 5243 - 5246
  • [3] EPR STUDIES ON SILICON-DOPED ALXGA1-X AS EPITAXIAL LAYERS
    WARTEWIG, S
    BOTTCHER, R
    KUHN, G
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 70 (01): : K23 - K24
  • [4] An optical study of the properties of (AlxGa1-x)0.5In0.49P epitaxial layers with varying composition, hydrostatic pressure and GaAs substrate orientation
    Jones, G
    Cain, N
    Peggs, DW
    Petrie, RP
    Bland, SW
    Mowbray, DJ
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 66 (1-3): : 126 - 130
  • [5] MOCVD Growth of GaAs / AlxGa1-x As Superlattices
    徐现刚
    黄柏标
    任红文
    刘士文
    蒋民华
    RARE METALS, 1994, (01) : 13 - 18
  • [6] RESONANT PEAKS IN THE TRANSMISSION COEFFICIENT OF COMPOSITIONALLY NONABRUPT GAAS/ALXGA1-X AS HETEROJUNCTIONS
    FREIRE, VN
    AUTO, MM
    FARIAS, GA
    SUPERLATTICES AND MICROSTRUCTURES, 1992, 11 (01) : 17 - 22
  • [7] AUGER PROFILE ON ALXGA1-X AS PROTECTED BY AS AND GAAS
    ETIENNE, P
    ALNOT, P
    ROCHETTE, JF
    MASSIES, J
    SURFACE AND INTERFACE ANALYSIS, 1986, 9 (1-6) : 342 - 342
  • [8] GaAs/AlxGa1-x as quantum cascade lasers
    Sirtori, C
    Kruck, P
    Barbieri, S
    Collot, P
    Nagle, J
    Beck, M
    Faist, J
    Oesterle, U
    APPLIED PHYSICS LETTERS, 1998, 73 (24) : 3486 - 3488
  • [9] INTERNAL PHOTOEMISSION IN GAAS/(ALXGA1-X)AS HETEROSTRUCTURES
    ABSTREITER, G
    PRECHTEL, U
    WEIMANN, G
    SCHLAPP, W
    PHYSICA B & C, 1985, 134 (1-3): : 433 - 438
  • [10] Ellipsometric study of ultrathin AlxGa1-x as layers
    Sukhorukova, MV
    Skorokhodova, IA
    Khvostikov, VP
    SEMICONDUCTORS, 2000, 34 (01) : 56 - 60