TRANSMISSION PROPERTIES OF RIB WAVEGUIDES FORMED BY ANODIZATION OF EPITAXIAL GAAS ON ALXGA1-X AS LAYERS

被引：35
作者：
REINHART, FK
LOGAN, RA
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2] BELL TEL LABS INC,HOLMDEL,NJ 07733
来源：
APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 06期
关键词：
D O I：
10.1063/1.1655179
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：270 / 272
页数：3
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[3]  
MARCATILI EAJ, TO BE PUBLISHED
[4]   ELECTRO-OPTIC AND WAVEGUIDE PROPERTIES OF REVERSE-BIASED GALLIUM PHOSPHIDE P-N JUNCTIONS [J].
REINHART, FK ;
NELSON, DF ;
MCKENNA, J .
PHYSICAL REVIEW, 1969, 177 (03) :1208-+
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