NEGATIVE RESISTANCE IN P-N JUNCTIONS UNDER AVALANCHE BREAKDOWN CONDITIONS .I.

被引:152
作者
MISAWA, T
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D O I
10.1109/T-ED.1966.15647
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:137 / +
页数:1
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[4]   NEGATIVE RESISTANCE ARISING FROM TRANSIT TIME IN SEMICONDUCTOR DIODES [J].
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