PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON VIA LPCVD .1. PROCESS CHARACTERIZATION

被引：0
作者：
MEYERSON, BS [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 05期
关键词：
D O I：
10.1149/1.2165135
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：1258 / 1258
页数：1
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[2]   ARRHENIUS PARAMETERS FOR SILENE INSERTION REACTIONS [J].
JOHN, P ;
PURNELL, JH .
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 1973, 69 (08) :1455-1461
[3]   PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON VIA LPCVD .2. SURFACE INTERACTIONS OF THE SILANE PHOSPHINE SILICON SYSTEM [J].
MEYERSON, BS ;
YU, ML .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2366-2368
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