SEMICONDUCTOR-DEVICE SIMULATION

被引:21
作者
FICHTNER, W [1 ]
ROSE, DJ [1 ]
BANK, RE [1 ]
机构
[1] UNIV CALIF SAN DIEGO,SAN DIEGO,CA 92093
来源
SIAM JOURNAL ON SCIENTIFIC AND STATISTICAL COMPUTING | 1983年 / 4卷 / 03期
关键词
D O I
10.1137/0904031
中图分类号
O29 [应用数学];
学科分类号
070104 ;
摘要
引用
收藏
页码:391 / 415
页数:25
相关论文
共 66 条
[1]  
ADLER MS, 1979, NUMERICAL ANAL SEMIC
[2]  
BANK R, 1979, 1978 SPARS MATR P
[3]  
BANK RE, 1983, SIAM J SCI STAT COMP, V4, P416, DOI 10.1137/0904032
[4]   GLOBAL APPROXIMATE NEWTON METHODS [J].
BANK, RE ;
ROSE, DJ .
NUMERISCHE MATHEMATIK, 1981, 37 (02) :279-295
[5]  
BANK RE, IEEE T ELECTRON DEVI, V30, P1031
[6]  
BAUER G, 1974, SPRINGER TRACTS MODE, V74
[7]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[8]   FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM [J].
BUTURLA, EM ;
COTTRELL, PE ;
GROSSMAN, BM ;
SALSBURG, KA .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) :218-231
[9]  
BUTURLA EM, 1980, IEEE INT SOL STAT CI, P76
[10]  
CHANG WH, 1976, IEEE T MICROWAVE THE, V24