DEPOSITION RATE AND PHOSPHORUS CONCENTRATION OF PHOSPHOSILICATE GLASS-FILMS IN RELATION TO O2-SIH4 + PH3 MOLE FRACTION

被引：26

作者：

SHIBATA, M ^{[1
]}

SUGAWARA, K ^{[1
]}

机构：

[1] HITACHI LTD,SEMICONDUCTOR & INTEGRATED CIRCUITS DIV,KODAIRA,TOKYO,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 01期

关键词：

D O I：

10.1149/1.2134146

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：155 / 156

页数：2

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[2]

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LOWE, ME .

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[8] CHEMICAL VAPOR DEPOSITION OF SILICATE GLASSES FOR USE WITH SILICON DEVICES .1. DEPOSITION TECHNIQUES [J].

KERN, W ;

HEIM, R .

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[9]

KERN W, 1968, RCA REV, V29, P525

[10] ADVANTAGES OF VAPOR-PLATED PHOSPHOSILICATE FILMS IN LARGE-SCALE INTEGRATED CIRCUIT ARRAYS [J].

SCHLACTER, MM ;

SCHLEGEL, ES ;

KEEN, RS ;

LATHLAEN, RA ;

SCHNABLE, GL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (12) :1077-+

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