THIN-FILM DEPOSITION USING LOW-ENERGY ION-BEAMS .2. PB+ ION-BEAM DEPOSITION AND ANALYSIS OF DEPOSITS

被引：7

作者：

AMANO, J ^{[1
]}

LAWSON, RPW ^{[1
]}

机构：

[1] UNIV ALBERTA,DEPT ELECT ENGN,EDMONTON,ALBERTA,CANADA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 02期

关键词：

D O I：

10.1116/1.569184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：690 / 694

页数：5

共 11 条

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[8] OBSERVATION OF FILM GROWTH PROCESS BY MEANS OF BACKSCATTERING TECHNIQUE [J].

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[9] INVESTIGATION OF STOICHIOMETRY AND IMPURITY CONTENT OF THIN SILICON OXIDE-FILMS USING RUTHERFORD SCATTERING OF MEV ALPHA-PARTICLES [J].

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