PHOTOELECTRONIC PROPERTIES OF HIGH-RESISTIVITY GAAS-CR

被引：107

作者：

LIN, AL ^{[1
]}

BUBE, RH ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 05期

关键词：

D O I：

10.1063/1.322905

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1859 / 1867

页数：9

相关论文

共 48 条

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[8] BROOM RF, 1969, J APPL PHYS, V38, P3483
[9] BUBE RH, 1962, PHYS REV, V128, P2062, DOI 10.1103/PhysRev.128.2062
[10] PHOTOCONDUCTIVITY OF ZINC SELENIDE CRYSTALS AND A CORRELATION OF DONOR AND ACCEPTOR LEVELS IN II-VI-PHOTOCONDUCTORS
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