DIFFUSION-INDUCED DEFECTS IN SILICON .2.

被引：34

作者：

LEVINE, E

WASHBURN, J

THOMAS, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 01期

关键词：

D O I：

10.1063/1.1709016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：87 / &

共 16 条

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[10]

LEVINE E, 1967, J APPL PHYS, V38, P81, DOI 10.1063/1.1709015

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