Al2O3层厚度对PbZrO3/Al2O3异质结薄膜储能性能的影响

被引：0
|
作者：
王占杰
于海义
邵岩
王子权
白宇
机构：
[1] 沈阳工业大学材料科学与工程学院
来源：
沈阳工业大学学报 | 2024年 / 46卷 / 01期
关键词：
电介质电容器; PbZrO3薄膜; Al2O3插层; 铁电; 反铁电; 储能性能; 热蒸镀; 化学溶液沉积法;
D O I：
暂无
中图分类号：
TB383.2 []; TM53 [电容器];
学科分类号：
摘要：
为了提高Pt/PbZrO3/Pt电介质电容器的储能密度，通过热蒸镀和自然氧化方法在Pt/Ti/SiO2/Si基板上沉积了厚度为0～10 nm的Al2O3（AO）层，采用化学溶液沉积法制备PbZrO3薄膜，研究了Al2O3层厚度对PbZrO3/Al2O3（PZO/AO）异质结薄膜储能性能的影响。结果表明：随着AO层厚度的增加，PZO/AO异质结薄膜的击穿电场强度逐渐增大，极化-电场电滞回线由反铁电特征转变为铁电特征。当PZO/AO异质结薄膜的AO层厚度为5 nm时，储能密度最大值为21.2 J/cm3。
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页码：72 / 76
页数：5
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