Electrodeposition and characterization of thermoelectric Bi2Se3 thin films

被引:0
作者
Xiao-long Li
Ke-feng Cai
Hui Li
Ling Wang
Chi-wei Zhou
机构
[1] Tongji University,Functional Materials Research Laboratory
来源
International Journal of Minerals, Metallurgy, and Materials | 2010年 / 17卷
关键词
thermoelectric thin films; bismuth selenide; electrodeposition; thermoelectric properties; cold isostatic pressing;
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学科分类号
摘要
Bi2Se3 thin films were electrochemically deposited on Ti and indium tin oxide-coated glass substrates, respectively, at room temperature, using Bi(NO3)3·5H2O and SeO2 as starting materials in diluted HNO3 solution. A conventional three-electrode cell was used with a platinum sheet as a counter electrode, and a saturated calomel electrode was used as a reference electrode. The films were annealed in argon atmosphere. The influence of cold isostatic pressing before annealing on the microstructure and thermoelectric properties of the films was investigated. X-ray diffraction analysis indicates that the film grown on the indium tin oxide-coated glass substrate is pure rhombohedral Bi2Se3, and the film grown on the Ti substrate consists of both rhombohedral and orthorhombic Bi2Se3.
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页码:104 / 107
页数:3
相关论文
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