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Modeling of defect formation processes in dislocation-free silicon single crystals
被引：0
作者：
V. I. Talanin
I. E. Talanin
机构：
[1] Classical Private University,
来源：
Crystallography Reports
|
2010年
/
55卷
关键词：
Crystallography Report;
Crystallization Front;
Excess Vacancy;
Intrinsic Point Defect;
Heterogeneous Mechanism;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A new alternative model of the formation and transformation of grown-in microdefects in dislocation-free silicon single crystals is proposed. The basic concepts of the alternative mathematical model of the formation of secondary grown-in microdefects are considered. It is shown that vacancy micropores are formed in a narrow temperature range of 1130–1070°C. This is caused by a sharp decrease in the concentration of background impurity which does not form agglomerates (they arise in the temperature range of 1420–1150°C upon crystal cooling).
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页码：632 / 637
页数：5
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