High-precision nanoscale length measurement

被引：7
|
作者：
Sheglov D.V. [1 ,2 ]
Kosolobov S.S. [1 ,2 ]
Fedina L.I. [1 ]
Rodyakina E.E. [1 ]
Gutakovskii A.K. [1 ]
Sitnikov S.V. [1 ]
Kozhukhov A.S. [1 ]
Zagarskikh S.A. [3 ]
Kopytov V.V. [3 ]
Evgrafov V.I. [3 ]
Shuvalov G.V. [3 ]
Matveichuk V.F. [3 ]
Latyshev A.V. [1 ,2 ]
机构：
[1] Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Lavrentieva 13, Novosibirsk
[2] Novosibirsk State University, Pirogova st. 2, Novosibirsk
[3] Siberian Research Institute of Metrology, pr. Dimitrova 4, Novosibirsk
来源：
Nanotechnologies in Russia | 2013年 / 8卷 / 7-8期
基金：
俄罗斯基础研究基金会;
关键词：
Atomic Force Microscope; Atomic Force Microscope Image; High Resolution Transmission Electron Microscopy; Silicon Surface; High Resolution Transmission Electron Microscopy Image;
D O I：
10.1134/S1995078013040162
中图分类号：
学科分类号：
摘要：
Modern lithographical methods used to create linear measures for nanometer-range dimensions and the main factors which limit the applications of such gages have been analyzed in the paper. Prospects for developing high-precision measures based on an atomically structured crystalline surface (containing monoatomic steps) whose parameters are bound to the crystallographic parameters of the crystal (traceable to the length measure) are shown. A method which can be used to create such measures based on controlling the surface morphology of monocrystalline silicon at an atomic level due to the effects of self-organization arising at the atomically clean surface as a result of annealing in ultrahigh vacuum is proposed. A description of the set of high-precision gages of vertical dimensions STEPP-IFP-1 in a size range of 0.31-31 nm with an error in the whole interval of gages of less than 0.05 nm is presented. The set of high-precision gages after carrying out state testing is included into the state registry of measuring means as measuring type no. 48115-11 (Federal Agency on Technical Regulating and Metrology order no. 6290 of October 31, 2011). © 2013 Pleiades Publishing, Ltd.
引用
收藏
页码：518 / 531
页数：13
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