Effect of heat treatment on the properties of erbium-doped silicon

被引：0

作者：

S. I. Vlasov

D. É. Nazyrov

A. A. Iminov

S. S. Khudaiberdiev

机构：

[1] Tashkent State University,

来源：

Technical Physics Letters | 2000年 / 26卷

关键词：

Silicon; Heat Treatment; Electrical Property; Thermal Treatment; Erbium;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effect of thermal treatment on the electrical properties of n-Si doped with the rare-earth element erbium during growth was studied for the first time. Annealing of the erbium-doped samples in air at 900–1200°C for 1–2 h, followed by quenching or slow cooling, leads to inhibition of the high-temperature defects.

引用

页码：328 / 329

页数：1

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