Photon properties of light in semiconductor microcavities

被引：1
作者：
Shan G. [1 ,2 ]
Huang W. [1 ,3 ]
机构：
[1] Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing
[2] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai
[3] Faculty of Engineering, National University of Singapore, Singapore
来源：
Frontiers of Optoelectronics in China | 2009年 / 2卷 / 3期
基金：
中国国家自然科学基金;
关键词：
exciton; exciton-photon interaction; microcavity; photon; quantum well (QW);
D O I：
10.1007/s12200-009-0017-9
中图分类号：
学科分类号：
摘要：
Properties of atom-like emitters in cavities are successfully described by cavity quantum electrodynamics (cavity-QED). In this work, we focus on the issue of the steady-state and spectral properties of the light emitted by a driven microcavity containing a quantum well (QW) with the excitonic interactions using simulation of fully quantum-mechanical treatment. The system is coherently pumped with laser, and it is found that depending on the relative values of pumping rate of stimulated emission, either one or two peaks close to the excitation energy of the QW or to the natural frequency of the cavity are shown in the emission spectrum. Furthermore, the nonclassical proprieties of the emitted photon have been investigated. This excitonic system presents several dynamical and statistical similarities to the atomic system, in particular for the bad-cavity and good-cavity limits. The results show that the photon emission can be significantly amplified due to the coupling strength between a single emitter and radiation field in the microcavity, and it is concluded that the present semiconductor microcavity system may serve as a QW laser with low threshold. © 2009 Higher Education Press and Springer-Verlag GmbH.
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页码：345 / 349
页数：4
相关论文
共 31 条
  • [1] Astratov V.N., Yang S., Lam S., Jones D., Sanvitto D., Whittaker D.M., Fox A.M., Skolnick M.S., Whispering gallery resonances in semiconductor micropillars, Applied Physics Letters, 91, 7, pp. 1-3, (2007)
  • [2] Eleuch H., Photon statistics of light in semiconductor, Journal of Physics B: Atomic, Molecular and Optical Physics, 41, 5, pp. 1-5, (2008)
  • [3] Painter O., Two-dimensional photonic band-gap defect mode laser, Science, 284, 5421, pp. 1819-1822, (1999)
  • [4] Baas A., Karr J., Eleuch H., Giacobino E., Optical bistability in semiconductor microcavities, Physical Review A, 69, 2, pp. 1-8, (2004)
  • [5] Reithmaier J.P., Sek G., Loeffler A., Hofmann C., Kuhn S., Reitzenstein S., Keldysh L.V., Kulakovskii V.D., Reinecke T.L., Forchel A., Strong coupling in a single quantum dot-semiconductor microcavity system, Nature, 432, 7065, pp. 197-200, (2004)
  • [6] Peter E., Senellart P., Martrou D., Lemaitre A., Hours J., Gerard J.M., Bloch J., Exciton-photon strong-coupling regime for a single quantum dot embedded in a microcavity, Physical Review Letters, 95, 6, pp. 1-4, (2005)
  • [7] Eastham P.R., Littlewood P.B., Finite-size fluctuations and photon statistics near the polariton condensation transition in a singlemode microcavity, Physical Review B, pp. 1-11, (2006)
  • [8] Shan G.C., Bao S.Y., Theoretical study of a quantum dot microcavity laser, Proceedings of SPIE, 6279, pp. 1-7, (2007)
  • [9] Grundmann M., Nanoscroll formation from strained layer heterostructures, Applied Physics Letters, 83, 12, pp. 2444-2446, (2003)
  • [10] Nomura M., Iwamoto S., Localized excitation of InGaAs quantum dots by utilizing a photonic crystal nanocavity, Applied Physics Letters, 88, 14, pp. 1-3, (2006)
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