The Optical Properties, Energy Band Structure, and Interfacial Conductance of a 3C-SiC(111)/Si(111) Heterostructure Grown by the Method of Atomic Substitution

被引：0
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作者：
S. A. Kukushkin
A. V. Osipov
机构：
[1] Institute for Problems of Mechanical Engineering,
[2] Russian Academy of Sciences,undefined
[3] Peter the Great St. Petersburg State Polytechnic University,undefined
来源：
Technical Physics Letters | 2020年 / 46卷
关键词：
silicon carbide; heterostructures; interface; dielectric permittivity; ellipsometry; semimetals.;
D O I：
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摘要：
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页码：1103 / 1106
页数：3
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