Magnetomechanical effect in silicon (Cz-Si) surface layers

被引:0
|
作者
O. V. Koplak
A. I. Dmitriev
R. B. Morgunov
机构
[1] Kyiv Taras Shevchenko University and National Academy of Sciences of Ukraine,Research and Training Center “Physical and Chemical Materials Science”
[2] Russian Academy of Sciences,Institute of Problems of Chemical Physics
来源
Physics of the Solid State | 2012年 / 54卷
关键词
Magnetic Field; Oxide Film; Silicon Sample; Magnetic Treatment; Chemical Potential Gradient;
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中图分类号
学科分类号
摘要
The mechanical properties of near-surface layers of Czochralski-grown silicon crystals Cz-n-Si(111) have been found to undergo changes in response to an external constant magnetic field (B ∼ 0.1 T). A magnetically induced variation in the microhardness, Young’s modulus, and coefficient of plasticity of silicon crystals correlates with the change in the lattice parameter and internal stresses of the sample. The growth of an oxide film under exposure to a magnetic field plays the principal role in the magnetomechanical effect due to a decrease in the concentration of oxygen complexes in the near-surface layers of the sample. In microstructured silicon, where the surface is considerably more developed, the magnetic field induces more profound changes in the internal stresses as compared to single crystals.
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页码:1433 / 1439
页数:6
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