Magnetomechanical effect in silicon (Cz-Si) surface layers

被引:0
|
作者
O. V. Koplak
A. I. Dmitriev
R. B. Morgunov
机构
[1] Kyiv Taras Shevchenko University and National Academy of Sciences of Ukraine,Research and Training Center “Physical and Chemical Materials Science”
[2] Russian Academy of Sciences,Institute of Problems of Chemical Physics
来源
Physics of the Solid State | 2012年 / 54卷
关键词
Magnetic Field; Oxide Film; Silicon Sample; Magnetic Treatment; Chemical Potential Gradient;
D O I
暂无
中图分类号
学科分类号
摘要
The mechanical properties of near-surface layers of Czochralski-grown silicon crystals Cz-n-Si(111) have been found to undergo changes in response to an external constant magnetic field (B ∼ 0.1 T). A magnetically induced variation in the microhardness, Young’s modulus, and coefficient of plasticity of silicon crystals correlates with the change in the lattice parameter and internal stresses of the sample. The growth of an oxide film under exposure to a magnetic field plays the principal role in the magnetomechanical effect due to a decrease in the concentration of oxygen complexes in the near-surface layers of the sample. In microstructured silicon, where the surface is considerably more developed, the magnetic field induces more profound changes in the internal stresses as compared to single crystals.
引用
收藏
页码:1433 / 1439
页数:6
相关论文
共 50 条
  • [21] Low temperature muonium behaviour in Cz-Si and Cz-Si0.91Ge0.09
    King, PJC
    Yonenaga, I
    PHYSICA B-CONDENSED MATTER, 2001, 308 : 546 - 549
  • [22] LeTID Mitigation by Electrical Injection Regeneration of Cz-Si and mc-Si BSF Silicon Solar Cells
    Zentar, Imad Yacine
    Bouhafs, Djoudi
    Amrouch, Abdelhakim
    JOURNAL OF ELECTRONIC MATERIALS, 2024, 53 (12) : 7734 - 7742
  • [23] ON THE INTRINSIC GETTERING IN FE-CONTAMINATED CZ-SI
    SCHMALZ, K
    KIRSCHT, FG
    NIESE, S
    RICHTER, H
    KITTLER, M
    SEIFERT, W
    BABANSKAYA, I
    KLOSE, H
    TITTELBACHHELMRICH, K
    SCHONEICH, J
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 100 (01): : 69 - 85
  • [24] Thermal behavior of electron irradiation defects in CZ-Si
    Huiying Cui
    Yangxian Li
    Guifeng Chen
    Lili Cai
    Ermin Zhao
    PRICM 6: SIXTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-3, 2007, 561-565 : 1113 - 1116
  • [25] A guide system in Φ 200 mm CZ-Si growth
    Ren, Bingyan
    Chu, Shijun
    Wu, Xin
    Yu, Jianxiu
    Sun, Xiuju
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2008, 29 (09): : 1790 - 1793
  • [26] Stress-induced oxygen precipitation in Cz-Si
    Misiuk, A
    Surma, B
    Hartwig, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 36 (1-3): : 30 - 32
  • [27] Effect of annealing temperature on oxygen precipitation in fast neutron irradiated CZ-Si
    Ma, Qiao-yun
    Li, Zhan-kai
    CHINA FUNCTIONAL MATERIALS TECHNOLOGY AND INDUSTRY FORUM, 2013, 320 : 403 - +
  • [28] Influence of the regime of plastic deformation on the magnetic properties of single-crystal silicon Cz-Si
    Dmitriev, A. I.
    Skvortsov, A. A.
    Koplak, O. V.
    Morgunov, R. B.
    Proskuryakov, I. I.
    PHYSICS OF THE SOLID STATE, 2011, 53 (08) : 1547 - 1553
  • [29] ON THE INTRINSIC GETTERING IN CU-CONTAMINATED CZ-SI
    SCHMALZ, K
    KIRSCHT, FG
    NIESE, S
    BABANSKAJA, I
    KITTLER, M
    RICHTER, H
    SCHONEICH, J
    SEIFERT, W
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 89 (01): : 389 - 401
  • [30] A STUDY ON THE PROPERTIES OF NEW DONORS IN CZ-SI CRYSTALS
    LIN, LY
    WANG, ZG
    QIAN, JJ
    GE, WK
    WAN, SK
    LIN, RG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C108 - C108