Magnetomechanical effect in silicon (Cz-Si) surface layers

被引:0
|
作者
O. V. Koplak
A. I. Dmitriev
R. B. Morgunov
机构
[1] Kyiv Taras Shevchenko University and National Academy of Sciences of Ukraine,Research and Training Center “Physical and Chemical Materials Science”
[2] Russian Academy of Sciences,Institute of Problems of Chemical Physics
来源
Physics of the Solid State | 2012年 / 54卷
关键词
Magnetic Field; Oxide Film; Silicon Sample; Magnetic Treatment; Chemical Potential Gradient;
D O I
暂无
中图分类号
学科分类号
摘要
The mechanical properties of near-surface layers of Czochralski-grown silicon crystals Cz-n-Si(111) have been found to undergo changes in response to an external constant magnetic field (B ∼ 0.1 T). A magnetically induced variation in the microhardness, Young’s modulus, and coefficient of plasticity of silicon crystals correlates with the change in the lattice parameter and internal stresses of the sample. The growth of an oxide film under exposure to a magnetic field plays the principal role in the magnetomechanical effect due to a decrease in the concentration of oxygen complexes in the near-surface layers of the sample. In microstructured silicon, where the surface is considerably more developed, the magnetic field induces more profound changes in the internal stresses as compared to single crystals.
引用
收藏
页码:1433 / 1439
页数:6
相关论文
共 50 条
  • [1] Magnetomechanical effect in silicon (Cz-Si) surface layers
    Koplak, O. V.
    Dmitriev, A. I.
    Morgunov, R. B.
    PHYSICS OF THE SOLID STATE, 2012, 54 (07) : 1433 - 1439
  • [2] Surface analyses of polycrystalline and Cz-Si wafers
    Castaldini, A
    Cavalcoli, D
    Cavallini, A
    Rossi, M
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 72 (1-4) : 425 - 432
  • [3] Silicon Dioxide as a Boundary for Oxygen Outdiffusion from CZ-Si
    Barcz, Adam
    DIFFUSION IN SOLIDS AND LIQUIDS V, PTS 1 AND 2, 2010, 297-301 : 688 - 693
  • [4] The effect of pulsed magnetic fields on Cz-Si crystals
    Levin, MN
    Zon, BA
    JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 1997, 84 (04) : 760 - 773
  • [5] The effect of pulsed magnetic fields on Cz-Si crystals
    M. N. Levin
    B. A. Zon
    Journal of Experimental and Theoretical Physics, 1997, 84 : 760 - 773
  • [6] Electron irradiation effect on thermal donors in CZ-Si
    Takakura, K
    Ohyama, H
    Murakawa, H
    Yoshida, T
    Rafí, JM
    Job, R
    Ulyashin, A
    Simoen, E
    Claeys, C
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 27 (1-3): : 133 - 135
  • [7] Structural, topological, electrical and luminescence properties of CZ-silicon (CZ-Si) irradiated by neutrons
    Nadjet Osmani
    L. Guerbous
    A. Boucenna
    Applied Physics A, 2018, 124
  • [8] Structural, topological, electrical and luminescence properties of CZ-silicon (CZ-Si) irradiated by neutrons
    Osmani, Nadjet
    Guerbous, L.
    Boucenna, A.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2018, 124 (10):
  • [9] Photoluminescence of porous silicon prepared from pressure treated Cz-Si
    Misiuk, A
    Surma, HB
    Bak-Misiuk, J
    Romano-Rodriguez, A
    Wnuk, A
    Brzozowski, A
    Bachrouri, A
    Barcz, A
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 182 (01): : 401 - 406
  • [10] The Effect of Plastic Deformation on the Defect-Impurity State and Magnetic Properties of Silicon (Cz-Si)
    Makara, V. A.
    Steblenko, L. P.
    Plyushchay, I. V.
    Kalinichenko, D. V.
    Kuryliuk, A. M.
    Krit, O. M.
    Melnyk, A. K.
    METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2013, 35 (03): : 359 - 366