Room Temperature Multiferroicity in Zn0.98Cu0.02O Film Prepared in N Plasma

被引：0
作者：
Qingyu Xu
Hao Liu
Zheng Wen
Jinlong Gao
Di Wu
Qi Li
Shaolong Tang
Mingxiang Xu
机构：
[1] Southeast University,Department of Physics
[2] Nanjing University,Department of Materials Science and Engineering
[3] Nanjing University,Department of Physics
来源：
Journal of Superconductivity and Novel Magnetism | 2011年 / 24卷
关键词：
ZnO; Multiferroicity; Diluted magnetic semiconductor; Ferromagnetism; Ferroelectricity;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Zn0.98Cu0.02O films have been prepared under different conditions by pulsed laser deposition. Ferromagnetism with saturate magnetization of about 7 emu/cm3 at 300 K has been observed in Zn0.98Cu0.02O film prepared in N plasma at room temperature. The concentration of oxygen vacancies was increased by N substituting O in N plasma, and the ferromagnetism originated from the aligned magnetic moments of more Cu ions mediated by oxygen vacancies. Furthermore, ferroelectricity has been confirmed by the observation of the electrical field dependent converse piezoelectric coefficient d33 loop at room temperature, indicating the potential multiferroic applications.
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页码：2119 / 2122
页数：3
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