LEDs based on InGaAs/GaAs heterostructures with magnetically controlled electroluminescence

被引：0
|
作者：
A. V. Kudrin
M. V. Dorokhin
Yu. A. Danilov
E. I. Malysheva
机构：
[1] Nizhni Novgorod State University,Physicotechnical Research Institute
来源：
Technical Physics Letters | 2011年 / 37卷
关键词：
GaAs; Light Emit Diode; Applied Magnetic Field; Quantum Well; Technical Physic Letter;
D O I：
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中图分类号：
学科分类号：
摘要：
A p-i-n light-emitting diode (LED) structure with an InGaAs/GaAs quantum well and a ferromagnetic GaMnAs layer as p-type semiconductor has been manufactured and investigated. An external magnetic field induces a decrease (up to ∼5% in a magnetic field of 3600 Oe at T = 10 K) in the GaMnAs layer resistance. In the voltage source regime, a change in this resistance leads to an increase in the intensity of electroluminescence of the given LED structure. This effect is due to ferromagnetism of the GaMnAs layer and vanishes at temperatures above the Curie point of this layer.
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页码：1168 / 1171
页数：3
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