InGaAs/GaAsSb/InP terahertz quantum cascade lasers

被引:0
作者
Christoph Deutsch
Hermann Detz
Tobias Zederbauer
Michael Krall
Martin Brandstetter
Aaron M. Andrews
Pavel Klang
Werner Schrenk
Gottfried Strasser
Karl Unterrainer
机构
[1] Technische Universität Wien,Photonics Institute and Center for Micro
[2] Technische Universität Wien, and Nanostructures
来源
Journal of Infrared, Millimeter, and Terahertz Waves | 2013年 / 34卷
关键词
Quantum cascade lasers; Terahertz generation; Novel material systems; Antimony materials; Transport in nanostructures;
D O I
暂无
中图分类号
学科分类号
摘要
The development of In0.53Ga0.47As/GaAs0.51Sb0.49 terahertz quantum cascade lasers is reviewed, starting with the first demonstration, through growth direction dependent performance issues, to high performance devices. This InP-based material system is an attractive alternative to the almost exclusively used GaAs/AlxGa1-xAs. Devices achieve maximum operating temperatures of 142 K and exhibit broadband lasing over a range of 660 GHz. A special focus has to be put on the growth direction related interface asymmetry for this material system. Symmetric active region designs are an elegant technique to investigate such asymmetries. A significant impact on the device performance is observed and attributed to interface roughness scattering.
引用
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页码:374 / 385
页数:11
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