Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and Al\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${}_{\mathbf{2}}$$\end{document}O\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${}_{\mathbf{3}}$$\end{document} Grown by Atomic Layer Deposition

被引：0

作者：

G. Yu. Sidorov

D. V. Gorshkov

Yu. G. Sidorov

I. V. Sabinina

V. S. Varavin

机构：

[1] Rzhanov Institute of Semiconductor Physics,

[2] Siberian Branch,undefined

[3] Russian Academy of Sciences,undefined

来源：

Optoelectronics, Instrumentation and Data Processing | 2020年 / 56卷 / 5期

关键词：

cadmium–mercury–tellurium; aluminum oxide; molecular beam epitaxy; atomic layer deposition; photodiodes; dielectric; passivating coating; capacitance–voltage characteristics; metal–dielectric–semiconductor structures; surface charge density;

D O I：

10.3103/S875669902005012X

中图分类号：

学科分类号：

摘要：

引用

页码：492 / 497

页数：5

共 17 条

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