Negative differential resistance and carrier transport of electrically bistable devices based on poly(N-vinylcarbazole)-silver sulfide composites

被引:0
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作者
Jiantao Li
Aiwei Tang
Xu Li
Yapeng Cao
Miao Wang
Yu Ning
Longfeng Lv
Qipeng Lu
Yunzhang Lu
Yufeng Hu
Yanbing Hou
Feng Teng
机构
[1] Beijing JiaoTong University,Key laboratory of Luminescence and Optical Information, Ministry of Education, School of Science
[2] Beijing JiaoTong University,Institute of Optoelectronic Technology
[3] Beijing JiaoTong University,Department of Chemistry, School of Science
来源
Nanoscale Research Letters | / 9卷
关键词
Bistable device; Ag; S nanocrystals; PVK; NDR effects; Charge trapping;
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摘要
An electrically bistable device has been fabricated based on poly(N-vinylcarbazole) (PVK)-silver sulfide (Ag2S) composite films using a simple spin-coating method. Current–voltage (I-V) characteristics of the as-fabricated devices exhibit a typical electrical bistability and negative differential resistance (NDR) effect. The NDR effect can be tuned by varying the positive charging voltage and the charging time. The maximum current ratio between the high-conducting state (ON state) and low-conducting state (OFF state) can reach up to 104. The carrier transport mechanisms in the OFF and ON states are described by using different models on the basis of the experimental result.
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