Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

被引：0
作者：
W. V. Lundin
E. E. Zavarin
M. A. Sinitsyn
A. V. Sakharov
S. O. Usov
A. E. Nikolaev
D. V. Davydov
N. A. Cherkashin
A. F. Tsatsulnikov
机构：
[1] Russian Academy of Sciences,Center for Microelectronics, Ioffe Physicotechnical Institute
[2] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[3] Center for Material Elaboration and Structural Studies (CEMES) of the National Center for Scientific Research (CNRS),undefined
来源：
Semiconductors | 2010年 / 44卷
关键词：
Active Region; InGaN Layer; Metalorganic Vapour Phase Epitaxy; Monosilane; Transmis Sion Electron Microscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Effect of pressure in the reactor in the case of growth of active regions in the InGaN/GaN light-emitting diodes by the method of vapor-phase epitaxy from metalorganic compounds on their electroluminescent and structural properties has been studied. It is shown that, as pressure is increased, the InGaN layers become transformed from being continuous in the lateral direction to the layers of separate InGaN islands. This transformation affects both the emission efficiency and the dependence of efficiency on current.
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页码：123 / 126
页数：3
相关论文
共 99 条
[1]  
Tokunaga H.(2004)undefined J. Gryst. Growth 272 348-undefined
[2]  
Ubukata A.(2007)undefined J. Cryst. Growth 298 831-undefined
[3]  
Yano Y.(2004)undefined J. Gryst. Growth 272 415-undefined
[4]  
Yamaguchi A.(2005)undefined Phys. Stat. Solidi C 2 2157-undefined
[5]  
Akutsu N.(2004)undefined J. Gryst. Growth 272 420-undefined
[6]  
Yamasaki T.(1999)undefined J. Electron. Mater. 28 287-undefined
[7]  
Matsumoto K.(1999)undefined Phys. Stat. Solidi A 176 253-undefined
[8]  
Kato S.(2009)undefined Fiz. Tekh. Poluprovodn. 43 841-undefined
[9]  
Satoh Y.(2010)undefined Fiz. Tekh. Poluprovodn. 44 96-undefined
[10]  
Sasaki H.(2002)undefined Appl. Phys. Lett. 80 2099-undefined
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