Fabrication and Analysis of the Current Transport Mechanism of Ni/n-GaN Schottky Barrier Diodes through Different Models

被引：0
作者：
S. Kumar
M. V. Kumar
S. Krishnaveni
机构：
[1] Department of Studies in Physics,
[2] Manasagangotri,undefined
[3] University of Mysore,undefined
[4] Department of Physics,undefined
[5] K.L.E Society’s R.L.S Institute,undefined
来源：
Semiconductors | 2020年 / 54卷
关键词：
Schottky contacts; GaN; electrical properties; Rhoderick’s method; Cheung’s method; Norde’s method; Modified Norde’s method; Hernandez’s method; Chattopadhyay’s method; current transport mechanism;
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页码：169 / 175
页数：6
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