Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography

被引：0
作者：
F Pezzoli
M Stoffel
T Merdzhanova
A Rastelli
OG Schmidt
机构：
[1] IFW Dresden,Institute for Integrative Nanosciences
[2] Institut für Halbleitertechnik,undefined
[3] Max-Planck-Institut für Festkörperforschung,undefined
来源：
Nanoscale Research Letters | / 4卷
关键词：
SiGe; Island; Alloying; Wet etching; Tomography; AFM; Lateral ordering;
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学科分类号：
摘要：
The three-dimensional composition profiles of individual SiGe/Si(001) islands grown on planar and pit-patterned substrates are determined by atomic force microscopy (AFM)-based nanotomography. The observed differences in lateral and vertical composition gradients are correlated with the island morphology. This approach allowed us to employ AFM to simultaneously gather information on the composition and strain of SiGe islands. Our quantitative analysis demonstrates that for islands with a fixed aspect ratio, a modified geometry of the substrate provides an enhancement of the relaxation, finally leading to a reduced intermixing.
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