Thermoelectric Properties of Hot-Pressed Materials Based on Mg2SinSn1−n

被引:0
作者
A. Yu. Samunin
V. K. Zaitsev
P. P. Konstantinov
M. I. Fedorov
G. N. Isachenko
A. T. Burkov
S. V. Novikov
E. A. Gurieva
机构
[1] A.F. Ioffe Physical-Technical Institute,
[2] Saint-Petersburg National Research University of Information Technique,undefined
[3] Mechanics and Optics,undefined
来源
Journal of Electronic Materials | 2013年 / 42卷
关键词
Thermoelectricity; silicide; hot pressing; figure of merit;
D O I
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中图分类号
学科分类号
摘要
Mg2SinSn1−n solid solutions consist of nontoxic widespread elements. In this work a number of samples of Mg2SinSn1−n solid solutions, where 1 ≥ n ≥ 0.7 with various carrier concentrations, were obtained using microcrystalline powder by hot pressing in vacuum. The Seebeck coefficient and the thermal and electrical conductivity were measured in the temperature range from 300 K to 800 K. It is shown that the specific thermoelectric figure of merit (the ratio of the thermoelectric figure of merit to the material density) of these samples weakly depends on the composition of the solid solution. Hence, whether a solid solution or pure Mg2Si is used depends on the application temperature of the material.
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页码:1676 / 1679
页数:3
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