Interfacial magnetism in stressed semiconductors with antiferromagnetic ordering

被引：0
作者：
V. G. Kantser
N. M. Malkova
机构：
[1] Academy of Sciences of Moldavia,Institute of Applied Physics
来源：
Physics of the Solid State | 1997年 / 39卷
关键词：
Spectroscopy; State Physics; Fermi Level; Interface State; Band Spectrum;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Stressed heterojunctions with antiferromagnetic ordering, in which the primary semiconductors have mutually inverted band spectra, are investigated. It is shown that the interface-bound states formed in these heterojunctions are split with respect to spin. As a result, if the Fermi level falls within one of the bands of the interface states, magnetic ordering is induced in the plane of the interface, i.e., the interfacial magnetism phenomenon can be observed.
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页码：1150 / 1153
页数：3
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