Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surface

被引：0
作者：
Yen Chih Chiang
Bing Cheng Lin
Kuo Ju Chen
Chien Chung Lin
Po Tsung Lee
Hao Chung Kuo
机构：
[1] National Chiao Tung University,Institute of Lighting and Energy Photonics
[2] National Chiao Tung University,Department of Photonics and Institute of Electro
[3] National Chiao Tung University,Optical Engineering
来源：
Nanoscale Research Letters | / 9卷
关键词：
Gallium nitride; Light-emitting diode; Vertical injection; Ultraviolet; Current blocking layer; Textured surface;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
For the purpose of light extraction and efficiency enhancement, the nitride-based ultraviolet vertical-injection light-emitting diodes (UV-VLEDs) with non-insulation current blocking layer (n-CBL) and optimized textured surface were fabricated. The optical and electrical characteristics were investigated in this n-CBL UV-VLED. Furthermore, the efficiency of optimized structure was improved by 5 ~ 6 times compared to our reference.
引用
收藏
相关论文
共 226 条
[1]  
Schubert EF(2005)Solid-state light sources getting smart Science 308 1274-1278
[2]  
Kim JK(2002)Phosphor-conversion white light emitting diode using InGaN near-ultraviolet chip Jpn J Appl Phys Part 2 L371-L373
[3]  
Narukawa Y(1997)Light-emitting-diode extraction efficiency Proc SPIE 3002 119-122
[4]  
NiKi I(2012)Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities Appl Phys Lett 100 081106-1–081106-3-1124
[5]  
Izuno K(2010)Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes Solid State Electron 54 1119-1811
[6]  
Yamada M(2007)Origin of efficiency droop in GaN-based light-emitting diodes Appl Phys Lett 91 183507-1–183507-3-2511
[7]  
Murazaki Y(2008)On the importance of radiative and Auger losses in GaN-based quantum wells Appl Phys Lett 92 261103-1–261103-3-G173
[8]  
Mukai T(2012)Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN Appl Phys Lett 101 122103-187
[9]  
Broditsky M(2013)Polarization induced hole doping in graded AlxGa1-xN (x = 0.71) layer grown by molecular beam epitaxy Appl Phys Lett 102 062108-177
[10]  
Yablonovitch E(2012)Polarization doping: reservoir effects of the substrate in AlGaN graded layers J Appl Phys 112 053711-G267
12345678910