Ba-induced phase segregation and band gap reduction in mixed-halide inorganic perovskite solar cells

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作者
Wanchun Xiang
Zaiwei Wang
Dominik J. Kubicki
Xueting Wang
Wolfgang Tress
Jingshan Luo
Jiahuan Zhang
Albert Hofstetter
Lijun Zhang
Lyndon Emsley
Michael Grätzel
Anders Hagfeldt
机构
[1] Wuhan University of Technology,State Key Laboratory of Silicate Materials for Architectures
[2] Ecole Polytechnique Fedérale de Lausanne (EPFL),Laboratory of Photomolecular Science, Institute of Chemical Sciences Engineering
[3] Ecole Polytechnique Fedérale de Lausanne (EPFL),Laboratory of Photonics and Interfaces, Institute of Chemical Sciences and Engineering
[4] Ecole Polytechnique Fedérale de Lausanne (EPFL),Laboratory of Magnetic Resonance, Institute of Chemical Sciences and Engineering
[5] Jilin University,State Key Laboratory of Superhard Materials, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering
[6] Nankai University,Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin
[7] Cavendish Laboratory,undefined
来源
Nature Communications | / 10卷
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摘要
All-inorganic metal halide perovskites are showing promising development towards efficient long-term stable materials and solar cells. Element doping, especially on the lead site, has been proved to be a useful strategy to obtain the desired film quality and material phase for high efficient and stable inorganic perovskite solar cells. Here we demonstrate a function by adding barium in CsPbI2Br. We find that barium is not incorporated into the perovskite lattice but induces phase segregation, resulting in a change in the iodide/bromide ratio compared with the precursor stoichiometry and consequently a reduction in the band gap energy of the perovskite phase. The device with 20 mol% barium shows a high power conversion efficiency of 14.0% and a great suppression of non-radiative recombination within the inorganic perovskite, yielding a high open-circuit voltage of 1.33 V and an external quantum efficiency of electroluminescence of 10−4.
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