Effect of Magnesium Diffusion Into the Active Region of LED Structures with InGaN/GaN Quantum Wells on Internal Quantum Efficiency

被引：0
作者：
I. S. Romanov
I. A. Prudaev
А. А. Marmalyuk
V. A. Kureshov
D. R. Sabitov
А. V. Маzalov
机构：
[1] National Research Tomsk State University,
[2] “SigmPlyus” Ltd,undefined
来源：
Russian Physics Journal | 2014年 / 57卷
关键词：
gallium nitride; magnesium; diffusion; internal quantum efficiency; LED;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The results of experimental studies of the dependence of an internal quantum efficiency of blue LED structures with multiple InGaN/GaN quantum wells on the growth temperature of a p-GaN layer are presented. The effect of the magnesium diffusion on the photoluminescence characteristics of LED structures is discussed.
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页码：533 / 535
页数：2
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