Structural, electrical, and multiferroic properties of Aurivillius (Bi7−xLax)Fe3Ti3O21 thin films

被引:0
作者
C. M. Raghavan
J. W. Kim
J. Y. Choi
S. S. Kim
J.-W. Kim
机构
[1] Changwon National University,Department of Physics
[2] Korea Institute of Materials Science,Functional Ceramics Group
来源
Journal of the Korean Physical Society | 2016年 / 68卷
关键词
La-doped Bi; Fe; Ti; O; thin film; Chemical solution deposition; Electrical properties; Multiferroic properties;
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摘要
The effects of La3+- ion doping on the structural, electrical, and multiferroic properties of the six-layered Aurivillius-phase Bi7Fe3Ti3O21 thin film were investigated. A chemical solution deposition method was used to deposit the (Bi7−xLax)Fe3Ti3O21 (x = 0 and 0.6) thin films on Pt(111)/Ti/SiO2/Si(100) substrates. The formation of Aurivillius orthorhombic structures was confirmed by using X-ray diffraction and Raman spectroscopy studies. The (Bi6.4La0.6)Fe3Ti3O21 thin film exhibited a low leakage current density (1.84 × 10−6 A/cm2 at an applied electric field of 100 kV/cm) and a large remnant polarization (20.20 μC/cm2 at an applied electric field of 318 kV/cm) as compared to the Bi7Fe3Ti3O21 thin film. The enhanced electrical and multiferroic properties are ascribed to a reduced oxygen concentration and a structural distortion. Both thin films were weakly ferromagnetic at room temperature.
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页码:1 / 6
页数:5
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