Monolithic integration of III-V optical interconnects on Si using SiGe virtual substrates

被引：0

作者：

V. K. Yang

M. E. Groenert

G. Taraschi

C. W. Leitz

A. J. Pitera

M. T. Currie

Z. Cheng

E. A. Fitzgerald

机构：

[1] MIT,Department of Materials Science and Engineering

来源：

Journal of Materials Science: Materials in Electronics | 2002年 / 13卷

关键词：

Thin Film; GaAs; Electronic Material; Dislocation Density; Lattice Mismatch;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Working optical links epitaxially grown by atmospheric MOCVD and fabricated on Si via SiGe virtual substrates are demonstrated for the first time. The SiGe virtual substrates are graded from Si substrates to 100% Ge. Because of the 0.07% lattice mismatch between GaAs and Ge, high-quality GaAs-based thin films with threading dislocation densities <3×106 cm−2 were realized. The optical link consists of a GaAs PIN-LED and a GaAs PIN detector diode. A vertical-coupling scheme was utilized to couple devices with a Al0.15Ga0.85As waveguide. Waveguides of varying length, Y-junctions, and bends were fabricated. The straight waveguides exhibited loss of approximately 144 dB cm−1.

引用

页码：377 / 380

页数：3

共 16 条

[1]

Levi A. F. J.(2000)undefined Proc. IEEE 88 750-undefined

[2]

Miller D. A. B.(2000)undefined Proc. IEEE 88 728-undefined

[3]

Plant D. V.(2000)undefined Proc. IEEE 88 806-undefined

[4]

Kirk A. G.(1988)undefined Appl. Opt. 27 1742-undefined

[5]

Feldman M. R.(2000)undefined Appl. Opt. 39 714-undefined

[6]

Gourlay J.(2000)undefined J. Appl. Phys. 87 2618-undefined

[7]

Ting S. M.(1998)undefined Appl. Phys. Lett. 72 1718-undefined

[8]

Fitzgerald E. A.(2000)undefined Appl. Phys. 90 2730-undefined

[9]

Currie M. T.(2001)undefined J. Vac. Sci. Technol. B 19 2268-undefined

[10]

Leitz C. W.(1993)undefined J. Lightwave Technol. 11 1296-undefined

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