Technology and Thermomechanics in Growing Tubular Silicon Single Crystals

被引：0
作者：
Verezub N.A. [1 ]
Kozhitov L.V. [2 ]
Kondratenko T.T. [3 ]
Prostomolotov A.I. [1 ]
Silaev I.V. [4 ]
机构：
[1] Ishlinsky Institute for Problems in Mechanics, Russian Academy of Sciences, Moscow
[2] National University of Science and Technology “MISiS”, Moscow
[3] Lebedev Physical Institute, Russian Academy of Sciences, Moscow
[4] Khetagurov North Ossetian State University, North Ossetia-Alania Republic, Vladikavkaz
来源：
Russian Microelectronics | 2022年 / 51卷 / 08期
关键词：
computer simulation; pipes; silicon; single crystal growth; thermal mechanics;
D O I：
10.1134/S1063739722080157
中图分类号：
学科分类号：
摘要：
Abstract: The problem of growing high-resistance low-dislocation tubular silicon single crystals for the nonplanar manufacturing technologies of epitaxial p–n junctions and the production of new-generation power semiconductor devices is considered. The possibilities of the Stepanov method for growing volumetric profiled crystalline products, whose application is based on the use of shapers of various designs, are discussed. In particular, the shortcomings of shapers associated with the melt contamination by foreign particles and impurities are discussed. Therefore, the primary attention is focused on the use of equipment that implements crystal growth from a melt without a shaper by the Czochralski method. The processes of thermal mechanics are preliminarily analyzed in relation to the existing and well-established process of growing polycrystalline highly dislocated silicon pipes of a large diameter by the Czochralski method for epitaxial reactors. It is noted that the growth of tubular low-dislocation small diameter silicon single crystals requires significant modernization of the standard hot zone, which is implemented for the REDMET-10 Czochralski furnace in this study. Thermal mechanical processes are calculated for such a modernized Czochralski furnace by computer simulation. The parameters of the grown tubular silicon single crystals are characterized, and their suitability for manufacturing power semiconductor devices using nonplanar technology is assessed. © 2022, Pleiades Publishing, Ltd.
引用
收藏
页码：677 / 685
页数：8
相关论文
共 23 条
  • [11] Sachs E.M., Thermal sensitivity and stability of EFG silicon ribbon growth, J. Cryst. Growth, 50, pp. 102-113, (1980)
  • [12] Eriss L., Stormont R.W., Surek T., Taylor A.S., The growth of silicon tubes by EFG process, J. Cryst. Growth, 50, pp. 200-211, (1980)
  • [13] Alioshin A.A., Bletscan N.I., Bogatyriov S.F., Fedorenko V.N., Silicon furnace components for microelectronic applications fabricated from shaped silicon tubes, J. Cryst. Growth, 104, pp. 130-135, (1990)
  • [14] Analysis of thermostress state in silicon tubes during its melt growing, In Proceedings of the 4Th International Conference on Single Crystal Growth and Heat and Mass Transfer, Ginkin, 3, pp. 680-688, (2001)
  • [15] Wijaranakula W., A real-time simulation of point defect reactions near the solid and melt interface of a 200 mm diameter Czochralski silicon crystal, J. Electrochem. Soc., 140, pp. 3306-3316, (1993)
  • [16] Kozhitov L.V., Kondratenko T.T., Krapukhin V.V., Kondratenko T.Y., Devices and technology based on non-planar silicon, in Novye materialy (New Materials), Moscow: Misis, pp. 15-184, (2002)
  • [17] Moscow: Misis, 2006, pp. 30-310
  • [18] Kozhitov L.V., Kondratenko T.T., Krapukhin V.V., Kazimirov N.I., Sorokin S.L., Taradey V.A., Bliev A.P., Silaev I.V., A method for growing hollow cylindrical Si single crystals based on the Chokhralsky method and a device for its implementation, RF Patent, (2009)
  • [19] Bliev A.P., Silaev I.V., Kozhitov L.V., Kondratenko T.T., Obtaining profile single crystals of tubular silicon, Fundam. Issled., 12, pp. 519-520, (2007)
  • [20] Garaza E.V., Tumaev E.N., Moscow, 2015, pp. 107-108, (2015)
123