Technology and Thermomechanics in Growing Tubular Silicon Single Crystals

Abstract: The problem of growing high-resistance low-dislocation tubular silicon single crystals for the nonplanar manufacturing technologies of epitaxial p–n junctions and the production of new-generation power semiconductor devices is considered. The possibilities of the Stepanov method for growing volumetric profiled crystalline products, whose application is based on the use of shapers of various designs, are discussed. In particular, the shortcomings of shapers associated with the melt contamination by foreign particles and impurities are discussed. Therefore, the primary attention is focused on the use of equipment that implements crystal growth from a melt without a shaper by the Czochralski method. The processes of thermal mechanics are preliminarily analyzed in relation to the existing and well-established process of growing polycrystalline highly dislocated silicon pipes of a large diameter by the Czochralski method for epitaxial reactors. It is noted that the growth of tubular low-dislocation small diameter silicon single crystals requires significant modernization of the standard hot zone, which is implemented for the REDMET-10 Czochralski furnace in this study. Thermal mechanical processes are calculated for such a modernized Czochralski furnace by computer simulation. The parameters of the grown tubular silicon single crystals are characterized, and their suitability for manufacturing power semiconductor devices using nonplanar technology is assessed. © 2022, Pleiades Publishing, Ltd.