Effect of Gd2O3 concentration in Bi-containing high-temperature solutions on the luminescence of epitaxial Gd3Ga5O12 films

被引：0

作者：

V. V. Randoshkin

N. V. Vasil’eva

V. N. Kolobanov

V. V. Mikhailin

N. N. Petrovnin

D. A. Spasskii

N. N. Sysoev

机构：

[1] Russian Academy of Sciences,Prokhorov General Physics Institute

[2] Moscow State University,Skobeltsyn Institute of Nuclear Physics

[3] Moscow State University,undefined

来源：

Inorganic Materials | 2009年 / 45卷

关键词：

Vasil; Luminescence Spectrum; Epitaxial Film; Gadolinium Gallium Garnet; Cathodoluminescence Spectrum;

D O I：

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学科分类号：

摘要：

Single-crystal gadolinium gallium garnet films have been grown by liquid-phase epitaxy on (111) Gd3Ga5O12 substrates from supercooled Bi2O3-B2O3 fluxed melts at different Gd2O3 concentrations. The luminescence spectra of the films have been measured at 10 and 300 K under unmonochromatized synchrotron X-ray excitation and selective UV synchrotron excitation. The Bi3+ luminescence is discussed.

引用

页码：418 / 422

页数：4