Effect of Gd2O3 concentration in Bi-containing high-temperature solutions on the luminescence of epitaxial Gd3Ga5O12 films

被引：0
|
作者：
V. V. Randoshkin
N. V. Vasil’eva
V. N. Kolobanov
V. V. Mikhailin
N. N. Petrovnin
D. A. Spasskii
N. N. Sysoev
机构：
[1] Russian Academy of Sciences,Prokhorov General Physics Institute
[2] Moscow State University,Skobeltsyn Institute of Nuclear Physics
[3] Moscow State University,undefined
来源：
Inorganic Materials | 2009年 / 45卷
关键词：
Vasil; Luminescence Spectrum; Epitaxial Film; Gadolinium Gallium Garnet; Cathodoluminescence Spectrum;
D O I：
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中图分类号：
学科分类号：
摘要：
Single-crystal gadolinium gallium garnet films have been grown by liquid-phase epitaxy on (111) Gd3Ga5O12 substrates from supercooled Bi2O3-B2O3 fluxed melts at different Gd2O3 concentrations. The luminescence spectra of the films have been measured at 10 and 300 K under unmonochromatized synchrotron X-ray excitation and selective UV synchrotron excitation. The Bi3+ luminescence is discussed.
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页码：418 / 422
页数：4
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