Island dissolution during capping layer growth interruption

被引：27

作者：

Wang L.G. ^{[1
]}

Kratzer P. ^{[1
]}

Scheffler M. ^{[1
]}

Liu Q.K.K. ^{[2
]}

机构：

[1] Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin

[2] Abteilung Theoretische Physik, Hahn-Meitner-Institut, 14109 Berlin

来源：

Applied Physics A: Materials Science and Processing | 2001年 / 73卷 / 02期

关键词：

PACS: 68.65.+g; 81.15.Hi; 68.35.Bs; 71.15.Nc;

D O I：

10.1007/s003390100854

中图分类号：

学科分类号：

摘要：

A possible scenario for the dissolution of partially capped quantum dots was investigated. This model is based on the consideration of the total free energy being a sum of elastic and surface energies as the quantum-dot material redistributes itself as a second wetting layer on top of the capping layer. Quantitative results were obtained for the case of InAs/GaAs quantum dots that are partially capped by GaAs. We compare our results with supporting experimental evidence.

引用

页码：161 / 165

页数：4

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