A fluctuation mechanism of electron transitions in magnetic semiconductors

被引：1

作者：

Volkov A.G. ^{[1
]}

Povzner A.A. ^{[1
]}

Podshivalova O.V. ^{[1
]}

Shumikhina K.A. ^{[1
]}

Anoshina O.V. ^{[1
]}

机构：

[1] Ural State Technical University,

来源：

Russian Physics Journal | 2006年 / 49卷 / 11期

关键词：

Magnetic Semiconductor; Heavy Fermion; Hybridization Effect; Spin Fluctuation; Spin Splitting;

D O I：

10.1007/s11182-006-0238-y

中图分类号：

学科分类号：

摘要：

The role of hybridization effects in a system of highly correlated electrons is studied. It is shown that a narrow band of heavy fermions is formed within the hybridization gap due to strong scattering of d-electrons by spin fluctuations. The heavy-fermion states undergo the Anderson localization with increase in the spin and charge-density fluctuations. The electron-phase transformations into La0.65Ca0.35MnO3 are discussed on the basis of the proposed mechanism. © 2006 Springer Science+Business Media, Inc.

引用

页码：1153 / 1158

页数：5

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