Use of a precursor solution to fill the gaps between indium tin oxide nanorods, for preparation of three-dimensional CuInGaS2 thin-film solar cells

被引：0
作者：
Van Ben Chu
Jin Woo Cho
Se Jin Park
Hoo Keun Park
Young Rag Do
Byoung Koun Min
机构：
[1] Korea Institute of Science and Technology,Clean Energy Research Center
[2] University of Science and Technology,Green school
[3] Korea University,Department of Chemistry
[4] Kookmin University,undefined
来源：
Research on Chemical Intermediates | 2014年 / 40卷
关键词：
Gap filling; ITO nanorods; CIGS; Superstrate-type; Solar cells;
D O I：
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中图分类号：
学科分类号：
摘要：
We have fabricated a three-dimensional (3D) nanostructured indium tin oxide (ITO) film in which the spaces were filled by use of a Cu, In, and Ga precursor solution. This solution has potential for use in bulk heterojunction CuInxGa1−xS2 (CIGS) thin-film solar cells. ITO nanorod films ~700 nm thick on glass substrates were synthesized by radio-frequency magnetron sputtering deposition. To ensure complete filling of the gaps in ITO nanorod films, a polymeric binder-free precursor solution was used. In addition, a two-step heating process (oxidation and sulfurization) was used after coating of the precursor solution to make a CIGS absorber film with a minimum of carbon impurities. Superstrate-type solar cell devices with 3D nanostructured films (CIGS–ITO) had a photovoltaic efficiency of 1.11 % despite the absence of a buffer layer (e.g. CdS) between the CIGS and ITO.
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页码：49 / 56
页数：7
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