Manganese depth-concentration profiles in ion-implanted silicon studied by Rutherford backscattering

被引：0

作者：

B. É. Égamberdiev

M. Yu. Adylov

机构：

[1] Abu Raikhan Beruni State Technical University,

来源：

Technical Physics Letters | 2001年 / 27卷

关键词：

Oxygen; Silicon; Manganese; Thermal Annealing; Independent Method;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Variation of the depth-concentration profiles of manganese atoms implanted into silicon was studied by the Rutherford backscattering (RBS) method in samples irradiated to various doses and annealed at different temperatures. The results are consistent with the analogous data obtained by an independent method. The post-implantation thermal annealing affects the distribution of Mn and other impurities, in particular, oxygen. The RBS method provides data both on the distribution of implanted dopants and on their interaction with other impurities.

引用

页码：168 / 170

页数：2