Infrared transmittance spectra of photoluminescent oxide films with Si and Ge quantum dots formed by pulsed laser ablation

被引：0

作者：

I. P. Lisovskyy

S. A. Zlobin

É. B. Kaganovich

É. G. Manoĭlov

E. V. Begun

机构：

[1] National Academy of Sciences of Ukraine,Lashkarev Institute of Semiconductor Physics

来源：

Semiconductors | 2008年 / 42卷

关键词：

78.55.-m; 78.55.Ap; 78.67.Bf; 78.67.Hc;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The composition of photoluminescent films containing low-dimensional silicon and germanium is studied. Si, Ge, and Al oxide films containing Si and Ge quantum dots are produced by pulsed laser ablation. The infrared transmittance spectra in the range of wave numbers from 650 to 1400 cm−1 and the time-resolved photoluminescence spectra in the energy range from 1.4 to 3.2 eV at room temperature are recorded. Correlations between the conditions of formation of the films, their photoluminescence properties, and the stretching vibrations of Si-O-Si, Ge-O-Ge, and Al-O bonds are established.

引用

页码：545 / 549

页数：4

共 37 条

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