Charge effects in a metal-semiconductor composite system

被引：0
|
作者：
A. V. Koropov
机构：
[1] National Academy of Sciences of Ukraine,Institute of Applied Physics
来源：
Physics of the Solid State | 2004年 / 46卷
关键词：
Spectroscopy; State Physics; Charge Distribution; Composite System; Charge Effect;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Small-sized metallic particles contained as inclusions in an n-type nondegenerate semiconductor are considered. The problem concerning the potential and charge distributions in this composite system is analyzed in the case where regions depleted in carriers are formed around particles due to contact phenomena and these regions substantially overlap one another. The redistribution of charges among very small metallic particles (R ∼ 1–10 nm) is described with due regard for the semiconductor properties of the medium and the volume fraction of particles.
引用
收藏
页码：1502 / 1507
页数：5
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