Total ionizing dose effects in junctionless accumulation mode MOSFET

被引：0
作者：
Avashesh Dubey
Rakhi Narang
Manoj Saxena
Mridula Gupta
机构：
[1] University of Delhi South Campus,Semiconductor Device Research Laboratory, Department of Electronic Science
[2] University of Delhi,Department of Electronics, Sri Venkateswara College
[3] University of Delhi,Department of Electronics, Deen Dayal Upadhyaya College
来源：
Applied Physics A | 2021年 / 127卷
关键词：
Junctionless accumulation mode MOSFET; Gamma radiation; Total ionizing dose (TID); Border traps; Low-frequency noise; Sentaurus TCAD; Dosimeter; Radiation reliability;
D O I：
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中图分类号：
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摘要：
In this paper, an extensive investigation of low-frequency (1/f) noise and total ionizing dose–response of junctionless accumulation mode double-gate (JAM DG) MOSFET is presented. Current–voltage (Id–Vg) characteristics and low-frequency noise of JAM DG MOSFET are simulated at different ionized doses and compared to different gate oxide thickness and different channel doping concentrations. A significant amount of irradiation-induced threshold voltage shift and increase in low-frequency noise is observed for different gate oxide thickness and channel doping concentration. Moreover, the irradiation-induced border trap densities are also obtained at different doses. The gamma radiation model of Sentaurus TCAD is used to get the required results.
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