Fast deposition of diamond-like and diamond films using a plasmatron with interelectrode inserts

被引:0
|
作者
D. L. Tsyganov
A. I. Veremeichik
M. I. Sazonov
机构
[1] Instituto Superior Tecnico,Instituto de Plasmas de Fusao Nuclear, Laboratorio Associado
[2] Brest State Technical University,undefined
来源
Instruments and Experimental Techniques | 2015年 / 58卷
关键词
Diamond Film; Chemical Vapor Deposition Method; Graphite Phase; Fast Deposition; Auger Electron Spectros;
D O I
暂无
中图分类号
学科分类号
摘要
Data on the deposition of thin wear-resistant diamond-like films (DLFs) and diamond films (DFs) are reported. Films are deposited using the chemical vapor deposition method with the application of a supersonic high-temperature plasma jet generated by a high-enthalpy plasmatron with a sectionalized interelectrode insert and a cold gas curtain of discharge chamber walls. The deposition rate for DLFs and DFs is as high as 30–50 μm/h. The best results (the absence of the graphite phase in a film) are obtained at the highest degree of ionization of the supersonic plasma jet.
引用
收藏
页码:297 / 301
页数:4
相关论文
共 50 条
  • [41] EFFECT OF AMBIENT ON THE SURFACE-RESISTANCE OF DIAMOND FILMS DURING COOLING AFTER DEPOSITION
    MORI, Y
    EIMORI, N
    HATTA, A
    ITO, T
    HIRAKI, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (12A): : L1718 - L1720
  • [42] Microwave Plasma Chemical Vapor Deposition of Diamond Films on Silicon From Ethanol and Hydrogen
    马志斌
    满卫东
    汪建华
    王传新
    Plasma Science & Technology, 2003, (02) : 1735 - 1741
  • [43] HYDROGEN-ETCHING EFFECT OF SUBSTRATE ON DEPOSITION OF DIAMOND FILMS BY DC PLASMA CHEMICAL VAPOR-DEPOSITION
    NAKAO, S
    NODA, M
    WATATANI, H
    MARUNO, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (7A): : L1195 - L1198
  • [44] Etching of CVD diamond films using oxygen ions in ECR plasma
    Ma, Zhibin
    Wu, Jun
    Shen, Wulin
    Yan, Lei
    Pan, Xin
    Wang, Jianhua
    APPLIED SURFACE SCIENCE, 2014, 289 : 533 - 537
  • [45] Use of ultrafine-dispersed nanodiamond for selective deposition of boron-doped diamond films
    V. V. Dvorkin
    N. N. Dzbanovskii
    A. F. Pal’
    N. V. Suetin
    A. Yu. Yur’ev
    P. Ya. Detkov
    Physics of the Solid State, 2004, 46 : 729 - 732
  • [46] Effect of deposition temperature on properties of boron-doped diamond films on tungsten carbide substrate
    Shen, Bin
    Chen, Su-lin
    Sun, Fang-hong
    TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA, 2018, 28 (04) : 729 - 738
  • [47] Characteristics of Synthesized Diamond Films by Using CACVD Techniques at High Temperatures
    Wongprasert, Y.
    Pongsai, S. B.
    ASIAN CERAMIC SCIENCE FOR ELECTRONICS III AND ELECTROCERAMICS IN JAPAN XII, 2010, 421-422 : 131 - +
  • [48] Growth and characterization of diamond films on TiN/Si(100) by microwave plasma chemical vapor deposition
    Chen, Wei-Chun
    Wang, Wei-Lin
    Tiwari, Rajanish N.
    Chang, Li
    DIAMOND AND RELATED MATERIALS, 2009, 18 (2-3) : 124 - 127
  • [49] MECHANICAL-PROPERTIES OF DIAMOND FILMS BY A FILAMENT-ASSISTED CHEMICAL-VAPOR-DEPOSITION
    BABA, K
    AIKAWA, Y
    NEC RESEARCH & DEVELOPMENT, 1993, 34 (02): : 176 - 183
  • [50] Effects of deposition conditions and annealing process on the infrared optical properties of diamond films grown by MPCVD
    Wang, LJ
    Xia, YB
    Zhang, ML
    Su, QF
    Gu, BB
    Lou, YY
    FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2004, 5774 : 419 - 422