Giant magnetic response of a two-dimensional antiferromagnet

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作者
Lin Hao
D. Meyers
Hidemaro Suwa
Junyi Yang
Clayton Frederick
Tamene R. Dasa
Gilberto Fabbris
Lukas Horak
Dominik Kriegner
Yongseong Choi
Jong-Woo Kim
Daniel Haskel
Philip J. Ryan
Haixuan Xu
Cristian D. Batista
M. P. M. Dean
Jian Liu
机构
[1] University of Tennessee,Department of Physics and Astronomy
[2] Brookhaven National Laboratory,Department of Condensed Matter Physics and Materials Science
[3] University of Tokyo,Department of Physics
[4] University of Tennessee,Department of Materials Science and Engineering
[5] Charles University,Department of Condensed Matter Physics
[6] Academy of Sciences of the Czech Republic,Institute of Physics
[7] Advanced Photon Source,School of Physical Sciences
[8] Argonne National Laboratory,Quantum Condensed Matter Division and Shull
[9] Dublin City University,Wollan Center
[10] Oak Ridge National Laboratory,undefined
来源
Nature Physics | 2018年 / 14卷
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摘要
A fundamental difference between antiferromagnets and ferromagnets is the lack of linear coupling to a uniform magnetic field due to the staggered order parameter1. Such coupling is possible via the Dzyaloshinskii–Moriya (DM) interaction2,3, but at the expense of reduced antiferromagnetic (AFM) susceptibility due to the canting-induced spin anisotropy4. We solve this long-standing problem with a top-down approach that utilizes spin–orbit coupling in the presence of a hidden SU(2) symmetry. We demonstrate giant AFM responses to sub-tesla external fields by exploiting the extremely strong two-dimensional critical fluctuations preserved under a symmetry-invariant exchange anisotropy, which is built into a square lattice artificially synthesized as a superlattice of SrIrO3 and SrTiO3. The observed field-induced logarithmic increase of the ordering temperature enables highly efficient control of the AFM order. Our results demonstrate that symmetry can be exploited in spin–orbit-coupled magnets to develop functional AFM materials for fast and secured spintronic devices5–9.
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页码:806 / 810
页数:4
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