Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers

被引：22

作者：

Zhang, Haochen ^{[1
]}

Sun, Yue ^{[1
]}

Hu, Kunpeng ^{[1
]}

Yang, Lei ^{[1
]}

Liang, Kun ^{[1
]}

Xing, Zhanyong ^{[1
]}

Wang, Hu ^{[1
]}

Zhang, Mingshuo ^{[1
]}

Yu, Huabin ^{[1
]}

Fang, Shi ^{[1
]}

Kang, Yang ^{[1
]}

Sun, Haiding ^{[1
]}

机构：

[1] Univ Sci & Technol China, Sch Microelect, Hefei 230026, Peoples R China

来源：

SCIENCE CHINA-INFORMATION SCIENCES | 2023年 / 66卷 / 08期

基金：

中国国家自然科学基金;

关键词：

AlGaN; GaN HEMT; graded AlGaN back barrier; SiNx passivation; DHHEMT; high temperature stability; LEAKAGE CURRENT; IMPACT;

D O I：

10.1007/s11432-022-3694-4

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Wide bandgap GaN-based HEMTs have shown great potential as key components in various power electronic systems but still face challenges in the pursuit of devices with stable operation capability especially in harsh environments. Here, we report a high-performance double heterojunction (DH) based AlGaN/GaN HEMT by incorporating a decreasing-Al-composition (DAC) graded AlGaN back barrier (BB) beneath the GaN channel. Thanks to the improved electron confinement enabled by graded BB, the DHHEMT exhibits significantly improved on-state drain current density and off-state breakdown voltage compared with a single heterojunction (SH) based HEMT. More intriguingly, with an additional SiNx passivation layer, the surface states of the DH-HEMTs can be effectively suppressed, leading to an almost constant off-state leakage current and negligible gate contact degradation across the temperature range from 25 & DEG; C to 150 & DEG; C. These results highlight the superiority and reliability of the proposed graded AlGaN BB to boost device characteristics for applications under high temperatures and harsh conditions.

引用

页数：9

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